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00112 GP2S06 MA2Z376 HYB18T GBJ8M PS252 EN4403B M38503M
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  Datasheet File OCR Text:
 SMD Type
Silicon RF Switching Diode BAR65-03W
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
Low loss, low capacitance PIN-diode
+0.1 2.6-0.1
1.0max
Band switch for TV-tuners Series diode for mobile communications transmit-receive switch
0.475 0.375
Absolute M axim um Ratings Ta = 25
Param eter Diode reverse voltage Forward current Operating tem perature range Storage tem perature range Sym bol VR IF Top Tstg Value 30 100 -55 to +125 -55 to +150 Unit V mA
Electrical Characteristics Ta = 25
Parameter Reverse current Forward voltage Diode capacitance Symbol IR VF CT Conditions VR = 20 V, TA = 25 IF = 100 mA VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance Series inductance rf Ls IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz 0.93 0.6 0.57 0.65 0.56 1.8 Min Typ Max 20 1 0.9 0.8 0.95 0.9 nH Unit nA V pF
Marking
Marking blue M
+0.05 0.1-0.02
+0.1 1.3-0.1
Features
+0.05 0.3-0.05
+0.05 0.85-0.05
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